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FDMS86500L - N-Channel MOSFET

FDMS86500L Product details

Description

This N. Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance..

Features

  • Max rDS(on) = 2.5 mW at VGS = 10 V, ID = 25 A.
  • Max rDS(on) = 3.7 mW at VGS = 4.5 V, ID = 20 A.
  • Advanced Package and Silicon combination for low rDS(on) and high efficiency.
  • Next generation enhanced body diode technology, engineered for soft recovery.
  • MSL1 robust package design.
  • 100% UIL tested.
  • RoHS Compliant.

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